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US Patent Issued to CAMBRIDGE GAN DEVICES on July 28 for "Power semiconductor device comprising a silicon substrate" (British Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,527, issued on July 28, was assigned to CAMBRIDGE GAN DEVICES Ltd. (Cambridge, Great Britain). "Power semiconductor device comprising a sil... Read More


US Patent Issued to SAMSUNG ELECTRONICS on July 28 for "Semiconductor devices" (South Korean Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,528, issued on July 28, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor devices" was invented by Dongj... Read More


US Patent Issued to SAMSUNG ELECTRONICS on July 28 for "Semiconductor device and method of fabricating the same" (South Korean Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,529, issued on July 28, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device and method of fabricati... Read More


US Patent Issued to Intel on July 28 for "Metal gate cut formed after source and drain contacts" (Oregon Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,530, issued on July 28, was assigned to Intel Corp. (Santa Clara, Calif.). "Metal gate cut formed after source and drain contacts" was inve... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on July 28 for "Semiconductor device with dielectric layer and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,531, issued on July 28, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor device with dielectri... Read More


US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 28 for "Semiconductor device structure with gate dielectric layer and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,532, issued on July 28, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device structure ... Read More


US Patent Issued to International Business Machines on July 28 for "Split gate contacts for vertically stacked transistors" (New York, Connecticut Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,533, issued on July 28, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Split gate contacts for vertically stacked t... Read More


US Patent Issued to Intel on July 28 for "Fabrication of gate-all-around integrated circuit structures having common metal gates and having gate dielectrics with a dipole layer" (Oregon Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,534, issued on July 28, was assigned to Intel Corp. (Santa Clara, Calif.). "Fabrication of gate-all-around integrated circuit structures ha... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on July 28 for "Semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,535, issued on July 28, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor device" was invented ... Read More


US Patent Issued to SAMSUNG ELECTRONICS on July 28 for "Semiconductor device, integrated circuit, and multi-valued logic device including the same" (South Korean Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,536, issued on July 28, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device, integrated circuit, an... Read More